40214 tkim tc-00003095 / n2608qa ti im tc-00001754 no. a1356-1/5 http://onsemi.com semiconductor components industries, llc, 2014 april, 2014 bbl4001 n-channel power mosfet 60v, 74a, 6.1m , to-220f-3sg stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. features ? on-resistance r ds (on)1=4.7m (typ.) ? input capacitance ciss=6,900pf(typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current (dc) i d 74 a drain current (pulse) i dp pw 10 s, duty cycle 1% 296 a allowable power dissipation p d 2.0 w tc=25 c35w junction temperature tj 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 370 mj avalanche current *2 i av 65 a note : * 1 v dd =30v, l=100 h, i av =65a(fig.1) * 2 l 100 h, single pulse electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds = 60 v, v gs =0v 1 a gate to source leakage current i gss v gs =16v, v ds =0v 10 a gate threshold voltage v gs (th) v ds =10v, i d =1ma 1.2 2.6 v forward transconductance g fs v ds =10v, i d = 37 a 32 53 s static drain to source on-state resistance r ds (on)1 i d = 37 a, v gs =10v 4.7 6.1 m r ds (on)2 i d = 37 a, v gs =4v 7.0 9.8 m input capacitance ciss v ds =20v, f=1mhz 6900 pf output capacitance coss 740 pf reverse transfer capacitance crss 540 pf turn-on delay time t d (on) see speci ed test circuit. 48 ns rise time t r 300 ns turn-off delay time t d (off) 510 ns fall time t f 340 ns total gate charge qg v ds =30v, v gs =10v, i d =74a 135 nc gate to source charge qgs 18 nc gate to drain ?miller? charge qgd 32 nc diode forward voltage v sd i s =74a, v gs =0v 1.0 1.2 v ordering number : ena1356a ordering information see detailed ordering and shipping information on page 4 of this data sheet. to-220f-3sg product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bbl4001 no. a1356-2/5 r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs (th) i s -- v sd sw time -- i d drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a gate to source voltage, v gs -- v case temperature, tc -- c static drain to source on-state resistance, r ds (on) -- m static drain to source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain to source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a g fs -- i d forward transconductance, g fs -- s ciss, coss, crss -- v ds it14164 it14161 --50 --25 150 030 10 15 20 25 5 5 2 it14168 it14166 it14165 0.1 1.0 3 1.0 10 100 1.4 1.2 1.0 0.8 0.4 0.2 0.6 0 0.001 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 3 2 7 3 2 0.1 1.0 10 100 7 5 3 5 2 2 7 10000 100 1000 2 3 23 57 2 23 57 357 10 100 0 25 50 75 100 125 3 5 7 2 3 5 7 75 c tc= - -25 c --25 c tc=75 c i d =37a single pulse single pulse tc=75 c 25 c --25 c tc= --25c 25c 75 c v ds =10v tc=75 c 25 c --25 c v gs =0v single pulse ciss coss crss it14167 0.1 7 1.0 23 5 2 7 10 35 7 100 35 2 3 t d (off) v dd =30v v gs =10v f=1mhz t r 0.4 0.2 0.6 0.8 1.0 1.4 1.2 0 0 30 150 120 90 60 0 150 60 90 120 30 it14163 056710 8 1234 9 0 4 2 14 10 12 6 8 2 4 0 16 12 10 8 6 14 it14162 1.5 1.0 0.5 2.0 4.5 3.5 4.0 3.0 2.5 0 tc=25 c 4v v gs =3v 10v v ds =10v t f v gs =4v, i d =37a v gs =10v, i d =37a t d (on) 6v 8v 25 c 25 c 100 1000 2 3 5 5 7 7
bbl4001 no. a1356-3/5 v gs -- qg total gate charge, qg -- nc gate to source voltage, v gs -- v it14160 it14158 it14159 0 0 20 40 60 80 100 140 120 20 25 30 35 15 10 5 40 160 p d -- tc 0 0 20 40 60 80 100 120 2.5 140 160 p d -- ta 2.0 1.5 1.0 0.5 s o a 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta drain to source voltage, v ds -- v drain current, i d -- a allowable power dissipation, p d -- w allowable power dissipation, p d -- w avalanche energy derating factor -- % case temperature, tc -- c ambient temperature, ta -- c ambient temperature, ta -- c it14170 it14169 0 100 150 50 0 2 4 6 1 3 5 8 7 9 10 v ds =30v i d =74a 0.1 1.0 2 3 5 7 2 10 3 5 7 2 0.1 10 s 100 s 100ms 10ms 1ms 1.0 23 57 2 10 357 2 100 357 100 3 5 7 7 2 3 5 operation in this area is limited by r ds (on). i d =74a dc operation i dp =296a (pw 10 s) tc=25 c single pulse 0.001 0.01 0.1 1.0 10 r jc -- pulse time pulse time, pt -- s thermal resistance, r jc -- oc/w 0.000001 0.00001 2 0.0001 357 2 0.001 357 23 57 23 57 0.01 2 0.1 357 2 1 357 2 10 357 it17539 duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 single pulse
bbl4001 no. a1356-4/5 package dimensions BBL4001-1E to-220 fullpack, 3-lead / to-220f-3sg case 221at issue a unit : mm 1: gate 2: drain 3: source ordering & package information mar king electrical connection device package shipping memo BBL4001-1E to-220f-3sg sc-67 50 pcs. / tube pb-free bl4001 lot no. 1 3 2
bbl4001 ps no. a1356-5/5 note on usage : since the bbl4001 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products he rein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit pw=10 s d.c. 1% p. g 50 g s d i d =37a r l =0.81 v dd =30v v out bbl4001 v in 10v 0v v in 50 10v 0v 50 v dd l bbl4001
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